BU806 29/09/2012 comset semiconductors 1/3 semiconductors they are silicon epitaxial planar npn power trans istors in darlington configuration mounted in a to-220 plastic package. they are high voltage, high current devices for fast switching applications. compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage 400 v v cev collector-emitter voltage 400 v ceo collector-emitter voltage 200 v v ebo emitter-base voltage 6 v i c collector current 8 a i cm collector peak current 15 a i b base current 2 a p t power dissipation at case temperature t mb < 25c 60 w t j junction temperature 150 c t s storage temperature range -65 to +150 thermal characteristics symbol ratings value unit r thjc from junction to case thermal resistance 2.08 c/w r thja from junction to free-air thermal resistance 70 silicon darlington power transistors
BU806 29/09/2012 comset semiconductors 2/3 semiconductors electrical characteristics t c =25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo collector-emitter breakdown voltage (*) i c = 100 ma, i b = 0 200 - - v i ceov collector cutoff current v ce = 400 v, v be(off) = 6 v - - 100 a i ces collector cutoff current v ce = 400 v, v be(off) = 0 v - - 100 a i ebo emitter cutoff current v eb = 6 v, i c = 0 - - 3 ma v ce(sat) collector-emitter saturation voltage (*) i c = 5 a, i b = 250 ma - - 1.5 v v be(sat) base-emitter saturation voltage (*) i c = 5 a, i b = 250 ma - - 2.4 v v f diode forward voltage (*) i f = 7 a - - 3.5 v switching times. symbol ratings test condition(s) min typ max unit t on turn-on time v cc = 100 v; i c = 5 a i b1 = 50ma, i b2 = 500 ma - 0.35 - s t s storage time - 0.55 - t f fall time - 0.2 - (*) these parameters must be meas ured using pulse techniques, t p 300 s, duty cycle 1.5%
BU806 29/09/2012 comset semiconductors 3/3 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter package collector
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